Toshiba Electronic Devices & Storage Corporation 2nd Gen 650V SiC Schottky Barrier Diodes

Product Brief: Toshiba Electronic Devices & Storage Corporation (TDSC) has enhanced its diode portfolio with the addition of six Schottky barrier diodes (SBDs) fabricated with silicon carbide (SiC) and housed in surface-mount packages. Product Feature: The new SiC SBDs incorporate Toshiba’s latest second-generation chip, which delivers improvements in surge peak forward current (IFSM) and figure […]

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Wolfspeed Achieves All-SiC 1.2kV power Module Reliability Benchmark for Harsh Environment Operation

Wolfspeed’s new SiC power module enables highest reliability SiC devices for outdoor systems in renewable energy and transportation Wolfspeed, a Cree Company has announced that its power module has passed the harsh environment qualification test.  Wolfspeed achieved SiC 1.2kV power module reliability benchmark for simultaneous high-humidity, high-temperature and high-voltage conditions. This reliability benchmark enables system […]

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