Storage Corporation

Toshiba Electronic Devices & Storage Corporation Introduces Second-Generation 650V SiC Schottky Barrier Diodes

The new SiC SBDs incorporate Toshiba’s latest second-generation chip, and it delivers improvements in surge peak forward current (IFSM) and figure of merit (VF•Qc*1). Toshiba Electronic Devices & Storage Corporation (TDSC) has enhanced its diode portfolio with the addition of six Schottky barrier diodes (SBDs) fabricated with silicon carbide (SiC) and housed in surface-mount packages. […]

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